The following two papers have been accepted for presentation at the upcoming IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018), XI’ AN Shaanxi, China, May 2018. 2/3 of the technical papers will recommended to be published on “IEEE Journal of Emerging and Selected Topics in Power Electronics” (IF=4.27) through peer review process.

• A. Arvanitopoulos , S. Perkins, M. Antoniou, M. Jennings, K. Gyftakis, N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes”
• S. Perkins, A. Arvanitopoulos, K. Gyftakis, N. Lophitis, “The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”