Publications

Patents|Book Chapters|Journal Publications|Conference Publications|Other

Patent families
  1. P. Ward, N. Lophitis, T. Trajkovic, F. Udrea, “High Voltage Semiconductor Devices,” US20170243937, 2017.
  2. N. Lophitis, F. Udrea, U. Vemulapati, I Nistor, M. Arnold, J. Vobecky, M Rahimo, “Reverse conducting power semiconductor device”, US15078602, 2015, EP20150160264, 2016, JP2016056807A, 2016,  KR20160034475A, 2016, CN 201610442461, 2016, US009543305, 2017.
Book chapters
  1. N. Lophitis, A. Arvanitopoulos, S. Perkins, and M. Antoniou, “TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors,” in Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications, Y. K. Sharma, Ed. Rijeka: InTech, 2018. doi: 10.5772/intechopen.76062
Journal Publications
  1. P. A. Panagiotou, I. Arvanitakis, N. Lophitis, J. A. Antonino-Daviu, and K. N. Gyftakis, “A New Approach for Broken Rotor Bar Detection in Induction Motors Using Frequency Extraction in Stray Flux Signals,” IEEE Transactions on Industrial Applications, 2019. doi: 10.1109/TIA.2019.2905803
  2. K. Gyftakis, J. Antonino-Daviu, N. Lophitis, I. Arvanitakis, and P. Panagiotou, “On the broken rotor bar diagnosis using time-frequency analysis: ‘Is one spectral representation enough for the characterization of monitored signals?,’” IET Electric Power Applications, p. (in press), Feb. 2019. doi: 10.1049/iet-epa.2018.5512
  3. M. Antoniou, N. Lophitis, F. Udrea, M. Rahimo, U. Vemulapati, C. Corvasce, and U. Badstuebner, “Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area,” IEEE Electron Device Letters, vol. 40, no. 2, pp. 177–180, 2019. doi: 10.1109/LED.2018.2890702
  4. N. Lophitis, M. Antoniou, U. Vemulapati, J. Vobecky, U. Badstuebner, T. Wikstroem, T. Stiasny, M. Rahimo, and F. Udrea, “Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1342–1345, Sep. 2018. doi: 10.1109/LED.2018.2847050
  5. N. Lophitis, M. Antoniou, U. Vemulapati, J. Vobecky, U. Badstuebner, T. Wikstroem, T. Stiasny, M. Rahimo, and F. Udrea, “Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1342–1345, Sep. 2018. doi: 10.1109/LED.2018.2847050
  6. M. Antoniou, N. Lophitis, F. Udrea, F. Bauer, U. R. Vemulapati, and U. Badstuebner, “On the Investigation of the ‘Anode Side’ SuperJunction IGBT Design Concept,” IEEE Electron Device Letters, vol. 38, no. 8, pp. 1063–1066, Aug. 2017. doi: 10.1109/LED.2017.2718619
  7. Arvanitopoulos, N. Lophitis, K. N. Gyftakis, S. Perkins, and M. Antoniou, “Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design ( TCAD ) simulation,” IOP Semiconductor Science and Technology, vol. 32, no. 10, p. 104009, Oct. 2017. doi: 10.1088/1361-6641/aa856b
  8. N. Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, M. Rahimo, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, and M. Rahimo, “New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop,” IEEE Electron Device Letters, vol. 37, no. 4, pp. 467–470, Apr. 2016. doi: 10.1109/LED.2016.2533572
  9. M. Antoniou, N. Lophitis, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, and F. Udrea, “Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors,” IEEE Electron Device Letters, vol. 36, no. 8, pp. 823–825, Aug. 2015. doi: 10.1109/LED.2015.2433894
  10. N. Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, and M. Rahimo, “Improving Current Controllability in Bi-Mode Gate Commutated Thyristors,” IEEE Transactions on Electron Devices, vol. 62, no. 7, pp. 2263–2269, Jul. 2015. doi: 10.1109/TED.2015.2428994
  11. N. Lophitis, J. Vobecky, M. Arnold, T. Wikström, I. Nistor, M. Antoniou, and F. Udrea, “Parameters influencing the maximum controllable current in gate commutated thyristors,” IET Circuits, Devices & Systems, vol. 8, no. 3, pp. 221–226, May 2014. doi: 10.1049/iet-cds.2013.0217
  12. N. Lophitis, M. Antoniou, F. Udrea, F. D. Bauer, I. Nistor, M. Arnold, T. Wikstrom, and J. Vobecky, “The Destruction Mechanism in GCTs,” IEEE Transactions on Electron Devices, vol. 60, no. 2, pp. 819–826, Feb. 2013. doi: 10.1109/TED.2012.2235442
  13. N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. T. Rahimo, M. Arnold, T. Wikstroem, and J. Vobecky, “Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current,” IEEE Electron Device Letters, vol. 34, no. 8, pp. 954–956, Aug. 2013. doi: 10.1109/LED.2013.2267552
Papers in international conferences
  1. A. K. Tiwari, M. Antoniou, N. Lophitis, and F. Udrea, “High-temperature operation of >10kV SiC IGBT: benefits & constraints,” in 2019 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, (accepted)
  2. S. Perkins, M. Antoniou, A. K. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea, and N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments,” in The 14th International Seminar on Power Semiconductors (ISPS 2018), 2018
  3. A. Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, K. N. Gyftakis, and N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes,” in 2018 IEEE 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2018
  4. R. Stocker, N. Lophitis, and A. Mumtaz, “Development and Verification of a Distributed Electro-Thermal Li-Ion Cell Model,” in IECON 2018 – 44th Annual Conference of the IEEE Industrial Electronics Society, 2018, pp. 2044–2049. doi: 10.1109/IECON.2018.8591633
  5. P. A. Panagiotou, I. Arvanitakis, N. Lophitis, and K. N. Gyftakis, “FEM Study of Induction Machines Suffering from Rotor Electrical Faults Using Stray Flux Signature Analysis,” in 2018 XIII International Conference on Electrical Machines (ICEM), 2018, pp. 1861–1867. doi: 10.1109/ICELMACH.2018.8506707
  6. A. Arvanitopoulos, M. Antoniou, M. R. Jennings, F. Li, S. Perkins, K. N. Gyftakis, and N. Lophitis “On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures,” in The 14th International Seminar on Power Semiconductors (ISPS 2018), 2018
  7. S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, and N. Lophitis, “On the Static Performance of Commercial GaN-on- Si Devices at Elevated Temperatures,” in 2018 IEEE 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2018
  8. A. K. Tiwari, M. Antoniou, N. Lophitis, S. Perkins, and T. Trakovic, “Performance improvement of > 10kV SiC IGBTs with retrograde p-well,” in The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), 2018
  9. P. Panagiotou, I. Arvanitakis, N. Lophitis, J. A. Antonino-Daviu, and K. N. Gyftakis, “FEM Approach for Diagnosis of Induction Machines’ Non-Adjacent Broken Rotor Bars by STFT Spectrogram,” in 2018 IET 9th International Conference on Power Electronics, Machines & Drives (PEMD), 2018
  10. P. A. Panagiotou, I. Arvanitakis, N. Lophitis, J. A. Antonino-Daviu, and K. N. Gyftakis, “Analysis of Stray Flux Spectral Components in Induction Machines under Rotor Bar Breakages at Various Locations,” in 2018 XIII International Conference on Electrical Machines (ICEM), 2018, pp. 2345–2351. doi: 10.1109/ICELMACH.2018.8506929
  11. P. A. Panagiotou, K. N. Gyftakis, N. Lophitis, M. D. McCulloch, and D. A. Howey, “Investigation of traction motor windings’ insulation capacitance at switching frequencies under accelerated thermal stress,” in 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), 2017, pp. 537–543. doi: 10.1109/DEMPED.2017.8062407
  12. A. Arvanitopoulos, S. Perkins, K. N. Gyftakis, M. Antoniou, and N. Lophitis, “3C-SiC material parameters for accurate TCAD modeling and simulation,” in The 10th International Conference on Silicon Epitaxy and heterostructures – ICSI10, 2017, pp. 115–116
  13. S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, and N. Lophitis, “A comprehensive comparison of the static performance of commercial GaN-on-Si devices,” in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017, pp. 177–184.
    doi: 10.1109/WiPDA.2017.8170543
  14. M. Charalampidi, M. Hammond, N. Hadjipavlou, and N. Lophitis, “A Content and Language Integrated Learning (CLIL) Project: Opportunities and Challenges in the Context of Heritage Language Education,” in The European Conference on Language Learning 2017, 2017
  15. K. N. Gyftakis, P. A. Panagiotou, N. Lophitis, D. A. Howey, and M. D. McCulloch, “Breakdown resistance analysis of traction motor winding insulation under thermal ageing,” in 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017, pp. 5819–5825.
    doi: 10.1109/ECCE.2017.8096964
  16. A. Arvanitopoulos, N. Lophitis, S. Perkins, K. N. Gyftakis, M. Belanche Guadas, and M. Antoniou, “Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC,” in 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), 2017, pp. 565–571. doi: 10.1109/DEMPED.2017.8062411
  17. N. Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, and J. Vobecky, “4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode,” in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, pp. 371–374. doi: 10.1109/ISPSD.2016.7520855
  18. U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky, T. Stiasny, N. Lophitis, and F. Udrea, “An experimental demonstration of a 4.5 kV Bi-mode Gate Commutated Thyristor (BGCT),” in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 2015, pp. 109–112. doi: 10.1109/ISPSD.2015.7123401
  19. M. Antoniou, N. Lophitis, F. Udrea, F. Bauer, I. Nistor, M. Bellini, and M. Rahimo, “Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses,” in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 2015, vol. 2015–June, pp. 21–24. doi: 10.1109/ISPSD.2015.7123379
  20. N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikstrom, J. Vobecky, and M. Rahimo, “The Stripe Fortified GCT: A new GCT design for maximizing the controllable current,” in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 2014, pp. 123–126. doi: 10.1109/ISPSD.2014.6855991
  21. N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, and J. Vobecky, “Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors,” in International Seminar on Power Semiconductors (ISPS), 2012.
  22. N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikstrom, and J. Vobecky, “Experimentally validated three dimensional GCT wafer level simulations,” in 2012 IEEE 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012, pp. 349–352. doi: 10.1109/ISPSD.2012.6229093
  23. N. Lophitis, M. Antoniou, F. Udrea, T. Wikstrom, and I. Nistor, “Turn-off failure mechanism in large area IGCTs,” in CAS 2011 Proceedings (2011 International Semiconductor Conference), 2011, vol. 2, pp. 361–364. doi: 10.1109/SMICND.2011.6095817
Other conference and workshop posters and oral presentations
  1. Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, F. Li, K. Gyftakis and N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes”, EPSRC Power Electronics Centre Annual Conference, 2018.
  2. S. Perkins, A. Arvanitopoulos, K. Gyftakis and N. Lophitis, “The Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”, EPSRC Power Electronics Centre Annual Conference, 2018.
  3. S. Perkins, M. Antoniou, A. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea and N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, EPSRC Power Electronics Centre Annual Conference, 2018.
  4. P. M. Gammon, P. A. Mawby, N. Lophitis, N. Wright, A. O’Neill, F. Udrea, “Underpinning Power Electronics 2017 – Switch Optimisation Theme”, EPSRC Power Electronics Centre Annual Conference, 2017.
  5. R. Stocker, A. Mumtaz, N. Lophitis, “Understanding Ageing in Li-ion Cells : an Enabler for Effective Grid Interaction Strategies,” IEEE PES Manchester Electrical Energy and Power Systems (MEEPS), 2016.
  6. N. Lophitis, F. Udrea, I Nistor, “Three dimensional GCT wafer level simulations”, EPSRC Power Electronics Centre Launch event, 2013.