Patents|Book Chapters|Journal Publications|Conference Publications|Other

Patent families

- P. Ward,
**N. Lophitis**, T. Trajkovic, F. Udrea, “High Voltage Semiconductor Devices,” US20170243937,**2017**. **N. Lophitis**, F. Udrea, U. Vemulapati, I Nistor, M. Arnold, J. Vobecky, M Rahimo, “Reverse conducting power semiconductor device”, US15078602,**2015**, EP20150160264,**2016**, JP2016056807A,**2016**, KR20160034475A,**2016**, CN 201610442461,**2016**, US009543305,**2017**.

Book chapters

**N. Lophitis**, A. Arvanitopoulos, S. Perkins, and M. Antoniou, “TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors,” in*Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications*, Y. K. Sharma, Ed. Rijeka: InTech,**2018**. doi: 10.5772/intechopen.76062

Journal Publications

- P. A. Panagiotou, I. Arvanitakis,
**N. Lophitis**, J. A. Antonino-Daviu, and K. N. Gyftakis, “A New Approach for Broken Rotor Bar Detection in Induction Motors Using Frequency Extraction in Stray Flux Signals,”*IEEE Transactions on Industrial Applications*,**2019**. doi: 10.1109/TIA.2019.2905803 - K. Gyftakis, J. Antonino-Daviu,
**N. Lophitis**, I. Arvanitakis, and P. Panagiotou, “On the broken rotor bar diagnosis using time-frequency analysis: ‘Is one spectral representation enough for the characterization of monitored signals?,’” IET Electric Power Applications, p. (in press), Feb.**2019**. doi: 10.1049/iet-epa.2018.5512 - M. Antoniou,
**N. Lophitis**, F. Udrea, M. Rahimo, U. Vemulapati, C. Corvasce, and U. Badstuebner, “Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area,”*IEEE Electron Device Letters*, vol. 40, no. 2, pp. 177–180,**2019**. doi: 10.1109/LED.2018.2890702 **N. Lophitis**, M. Antoniou, U. Vemulapati, J. Vobecky, U. Badstuebner, T. Wikstroem, T. Stiasny, M. Rahimo, and F. Udrea, “Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability,”*IEEE Electron Device Letters*, vol. 39, no. 9, pp. 1342–1345, Sep.**2018**. doi: 10.1109/LED.2018.2847050**N. Lophitis**, M. Antoniou, U. Vemulapati, J. Vobecky, U. Badstuebner, T. Wikstroem, T. Stiasny, M. Rahimo, and F. Udrea, “Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability,”*IEEE Electron Device Letters*, vol. 39, no. 9, pp. 1342–1345, Sep.**2018**. doi: 10.1109/LED.2018.2847050- M. Antoniou,
**N. Lophitis**, F. Udrea, F. Bauer, U. R. Vemulapati, and U. Badstuebner, “On the Investigation of the ‘Anode Side’ SuperJunction IGBT Design Concept,”*IEEE Electron Device Letters*, vol. 38, no. 8, pp. 1063–1066, Aug.**2017**. doi: 10.1109/LED.2017.2718619 - Arvanitopoulos,
**N. Lophitis**, K. N. Gyftakis, S. Perkins, and M. Antoniou, “Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design ( TCAD ) simulation,”*IOP Semiconductor Science and Technology*, vol. 32, no. 10, p. 104009, Oct.**2017**. doi: 10.1088/1361-6641/aa856b **N. Lophitis**, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, M. Rahimo, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, and M. Rahimo, “New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop,”*IEEE Electron Device Letters*, vol. 37, no. 4, pp. 467–470, Apr.**2016**. doi: 10.1109/LED.2016.2533572- M. Antoniou,
**N. Lophitis**, F. Bauer, I. Nistor, M. Bellini, M. Rahimo, G. Amaratunga, and F. Udrea, “Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors,”*IEEE Electron Device Letters*, vol. 36, no. 8, pp. 823–825, Aug.**2015**. doi: 10.1109/LED.2015.2433894 **N. Lophitis**, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, I. Nistor, J. Vobecky, and M. Rahimo, “Improving Current Controllability in Bi-Mode Gate Commutated Thyristors,”*IEEE Transactions on Electron Devices*, vol. 62, no. 7, pp. 2263–2269, Jul.**2015**. doi: 10.1109/TED.2015.2428994**N. Lophitis**, J. Vobecky, M. Arnold, T. Wikström, I. Nistor, M. Antoniou, and F. Udrea, “Parameters influencing the maximum controllable current in gate commutated thyristors,”*IET Circuits, Devices & Systems*, vol. 8, no. 3, pp. 221–226, May**2014**. doi: 10.1049/iet-cds.2013.0217**N. Lophitis**, M. Antoniou, F. Udrea, F. D. Bauer, I. Nistor, M. Arnold, T. Wikstrom, and J. Vobecky, “The Destruction Mechanism in GCTs,”*IEEE Transactions on Electron Devices*, vol. 60, no. 2, pp. 819–826, Feb.**2013**. doi: 10.1109/TED.2012.2235442**N. Lophitis**, M. Antoniou, F. Udrea, I. Nistor, M. T. Rahimo, M. Arnold, T. Wikstroem, and J. Vobecky, “Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current,”*IEEE Electron Device Letters*, vol. 34, no. 8, pp. 954–956, Aug.**2013**. doi: 10.1109/LED.2013.2267552

Papers in international conferences

- A. K. Tiwari, M. Antoniou,
**N. Lophitis**, and F. Udrea, “High-temperature operation of >10kV SiC IGBT: benefits & constraints,” in*2019 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)*,**2019**, (accepted) - S. Perkins, M. Antoniou, A. K. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea, and
**N. Lophitis**, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments,” in*The 14th International Seminar on Power Semiconductors (ISPS 2018)*,**2018** - A. Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, K. N. Gyftakis, and
**N. Lophitis**, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes,” in*2018 IEEE 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia)*,**2018** - R. Stocker,
**N. Lophitis**, and A. Mumtaz, “Development and Verification of a Distributed Electro-Thermal Li-Ion Cell Model,” in*IECON 2018 – 44th Annual Conference of the IEEE Industrial Electronics Society*,**2018**, pp. 2044–2049. doi: 10.1109/IECON.2018.8591633 - P. A. Panagiotou, I. Arvanitakis,
**N. Lophitis**, and K. N. Gyftakis, “FEM Study of Induction Machines Suffering from Rotor Electrical Faults Using Stray Flux Signature Analysis,” in*2018 XIII International Conference on Electrical Machines (ICEM)*,**2018**, pp. 1861–1867. doi: 10.1109/ICELMACH.2018.8506707 - A. Arvanitopoulos, M. Antoniou, M. R. Jennings, F. Li, S. Perkins, K. N. Gyftakis, and
**N. Lophitis**“On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures,” in*The 14th International Seminar on Power Semiconductors (ISPS 2018)*,**2018** - S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, and
**N. Lophitis**, “On the Static Performance of Commercial GaN-on- Si Devices at Elevated Temperatures,” in*2018 IEEE 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia)*,**2018** - A. K. Tiwari, M. Antoniou,
**N. Lophitis**, S. Perkins, and T. Trakovic, “Performance improvement of > 10kV SiC IGBTs with retrograde p-well,” in*The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)*,**2018** - P. Panagiotou, I. Arvanitakis,
**N. Lophitis**, J. A. Antonino-Daviu, and K. N. Gyftakis, “FEM Approach for Diagnosis of Induction Machines’ Non-Adjacent Broken Rotor Bars by STFT Spectrogram,” in*2018 IET 9th International Conference on Power Electronics, Machines & Drives (PEMD)*,**2018** - P. A. Panagiotou, I. Arvanitakis,
**N. Lophitis**, J. A. Antonino-Daviu, and K. N. Gyftakis, “Analysis of Stray Flux Spectral Components in Induction Machines under Rotor Bar Breakages at Various Locations,” in*2018 XIII International Conference on Electrical Machines (ICEM)*,**2018**, pp. 2345–2351. doi: 10.1109/ICELMACH.2018.8506929 - P. A. Panagiotou, K. N. Gyftakis,
**N. Lophitis**, M. D. McCulloch, and D. A. Howey, “Investigation of traction motor windings’ insulation capacitance at switching frequencies under accelerated thermal stress,” in*2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)*,**2017**, pp. 537–543. doi: 10.1109/DEMPED.2017.8062407 - A. Arvanitopoulos, S. Perkins, K. N. Gyftakis, M. Antoniou, and
**N. Lophitis**, “3C-SiC material parameters for accurate TCAD modeling and simulation,” in*The 10th International Conference on Silicon Epitaxy and heterostructures – ICSI10*,**2017**, pp. 115–116 - S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, and
**N. Lophitis**, “A comprehensive comparison of the static performance of commercial GaN-on-Si devices,” in*2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)*,**2017**, pp. 177–184.

doi: 10.1109/WiPDA.2017.8170543 - M. Charalampidi, M. Hammond, N. Hadjipavlou, and
**N. Lophitis**, “A Content and Language Integrated Learning (CLIL) Project: Opportunities and Challenges in the Context of Heritage Language Education,” in*The European Conference on Language Learning 2017*,**2017** - K. N. Gyftakis, P. A. Panagiotou,
**N. Lophitis**, D. A. Howey, and M. D. McCulloch, “Breakdown resistance analysis of traction motor winding insulation under thermal ageing,” in*2017 IEEE Energy Conversion Congress and Exposition (ECCE)*,**2017**, pp. 5819–5825.

doi: 10.1109/ECCE.2017.8096964 - A. Arvanitopoulos,
**N. Lophitis**, S. Perkins, K. N. Gyftakis, M. Belanche Guadas, and M. Antoniou, “Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC,” in*2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)*,**2017**, pp. 565–571. doi: 10.1109/DEMPED.2017.8062411 **N. Lophitis**, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, and J. Vobecky, “4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode,” in*2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)*,**2016**, pp. 371–374. doi: 10.1109/ISPSD.2016.7520855- U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky, T. Stiasny,
**N. Lophitis**, and F. Udrea, “An experimental demonstration of a 4.5 kV Bi-mode Gate Commutated Thyristor (BGCT),” in*2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD)*,**2015**, pp. 109–112. doi: 10.1109/ISPSD.2015.7123401 - M. Antoniou,
**N. Lophitis**, F. Udrea, F. Bauer, I. Nistor, M. Bellini, and M. Rahimo, “Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses,” in*2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC’s (ISPSD)*,**2015**, vol. 2015–June, pp. 21–24. doi: 10.1109/ISPSD.2015.7123379 **N. Lophitis**, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikstrom, J. Vobecky, and M. Rahimo, “The Stripe Fortified GCT: A new GCT design for maximizing the controllable current,” in*2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD)*,**2014**, pp. 123–126. doi: 10.1109/ISPSD.2014.6855991**N. Lophitis**, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, and J. Vobecky, “Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors,” in*International Seminar on Power Semiconductors (ISPS)*,**2012**.**N. Lophitis**, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikstrom, and J. Vobecky, “Experimentally validated three dimensional GCT wafer level simulations,” in*2012 IEEE 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD)*,**2012**, pp. 349–352. doi: 10.1109/ISPSD.2012.6229093**N. Lophitis**, M. Antoniou, F. Udrea, T. Wikstrom, and I. Nistor, “Turn-off failure mechanism in large area IGCTs,” in*CAS 2011 Proceedings (2011 International Semiconductor Conference)*,**2011**, vol. 2, pp. 361–364. doi: 10.1109/SMICND.2011.6095817

Other conference and workshop posters and oral presentations

- Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, F. Li, K. Gyftakis and
**N. Lophitis**, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes”,*EPSRC Power Electronics Centre Annual Conference*,**2018**. - S. Perkins, A. Arvanitopoulos, K. Gyftakis and
**N. Lophitis**, “The Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”,*EPSRC Power Electronics Centre Annual Conference*,**2018**. - S. Perkins, M. Antoniou, A. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea and
**N. Lophitis**, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”,*EPSRC Power Electronics Centre Annual Conference*,**2018**. - P. M. Gammon, P. A. Mawby,
**N. Lophitis**, N. Wright, A. O’Neill, F. Udrea, “Underpinning Power Electronics 2017 – Switch Optimisation Theme”,*EPSRC Power Electronics Centre Annual Conference*,**2017**. - R. Stocker, A. Mumtaz,
**N. Lophitis**, “Understanding Ageing in Li-ion Cells : an Enabler for Effective Grid Interaction Strategies,”*IEEE PES Manchester Electrical Energy and Power Systems (MEEPS)*, 2016. **N. Lophitis**, F. Udrea, I Nistor, “Three dimensional GCT wafer level simulations”,*EPSRC Power Electronics Centre Launch event*,**2013**.