The following paper has been accepted for presentation at the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018.

• A. Tiwari, M. Antoniou, N. Lophitis, S. Perkins, T. Trajkovic, F. Udrea, “Performance improvement of 10kV SiC IGBTs with retrograde p-well”, The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK, Sept. 2018

The research on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme with partners from Warwick, Newcastle and Cambridge.