The following papers have been accepted for presentation at the International Seminar on Power Semiconductors (ISPS).

•  A. Arvanitopoulos, S. Perkins, M. Antoniou, L. Fan, M. Jennings, K. Gyftakis, N. Lophitis, “On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.
• S. Perkins, A. Arvanitopoulos, M. Antoniou, T. Trajkovic, F. Udrea, N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.

The work on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme . The work on 3C-SiC is aligned with the H2020 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE) project.