Paper accepted at the IEEE IECON 2018

The following paper has been accepted for presentation at the 44th Annual Conference of the IEEE Industrial Electronics Society (IECON) 2018, to be held in Washington, D.C., Oct. 21-23, 2018.

  • Richard Stocker, Neophytos Lophitis, Asim Mumtaz, “Development of 1d Distributed Electro-Thermal Li-Ion Cell Model” , 44th Annual Conference of the IEEE Industrial Electronics Society (IECON) 2018

12th European Conference on Silicon Carbide and Related Materials (ECSCRM)

The following paper has been accepted for presentation at the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018.

  • A. Tiwari, M. Antoniou, N. Lophitis, S. Perkins, T. Trajkovic, F. Udrea, “Performance improvement of 10kV SiC IGBTs with retrograde p-well”, The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK, Sept. 2018

The research on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme with partners from Warwick, Newcastle and Cambridge.

Papers accepted at the International Seminar on Power Semiconductors (ISPS)

The following papers have been accepted for presentation at the International Seminar on Power Semiconductors (ISPS).

  •  A. Arvanitopoulos, S. Perkins, M. Antoniou, L. Fan, M. Jennings, K. Gyftakis, N. Lophitis, “On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.
  • S. Perkins, A. Arvanitopoulos, M. Antoniou, T. Trajkovic, F. Udrea, N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.

The work on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme . The work on 3C-SiC is aligned with the H2020 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE) project.

EPSRC Centre for Power Electronics – 2018 Annual Conference

Coventry University featured as one of twelve member institutions of the EPSRC Centre for Power Electronics organising the 2018 Annual Conference of the Centre that took place in Loughborough on the 4th and 5th of July

 

Neo Lophitis and PhD students Anastasios Arvanitopoulos and Samuel Perkins represented Coventry University by presenting the following research:

  • Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, F. Li, K. Gyftakis and N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes”, EPSRC Centre for Power Electronics Loughborough, 2018.
  • S. Perkins, A. Arvanitopoulos, K. Gyftakis and N. Lophitis, “The Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”, EPSRC Centre for Power Electronics Loughborough, 2018.
  • S. Perkins, M. Antoniou, A. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea and N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, EPSRC Centre for Power Electronics Loughborough, 2018.

Papers accepted at the upcoming WiPDA Asia 2018

The following two papers have been accepted for presentation at the upcoming IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018), XI’ AN Shaanxi, China, May 2018. 2/3 of the technical papers will recommended to be published on “IEEE Journal of Emerging and Selected Topics in Power Electronics” (IF=4.27) through peer review process.

  • A. Arvanitopoulos , S. Perkins, M. Antoniou, M. Jennings, K. Gyftakis, N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes”
  • S. Perkins, A. Arvanitopoulos, K. Gyftakis, N. Lophitis, “The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”

Paper accepted for presentation at the 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, 2017.

The following paper has been accepted for presentation at the 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, 2017. The conference will take place in Hyatt Regency Tamaya Resort, Albuquerque, NM USA

S. Perkins, A. Arvanitopoulos, K. N. Gyftakis, and N. Lophitis, “A Comprehensive Comparison of the Static Performance of Commercial GaN-on-Si Devices,” in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, 2017.

Summary:
This work presents a comprehensive and experimentally derived comparison of the static performance of commercial Gallium Nitride on Silicon (GaN-on-Si) devices and references their performance against a state-of-the- art Si Super-Junction (S-J) device. The Panasonic PGA26C09DV Enhancement mode (E-mode) p-GaN layer Gate Injected Transistor (GIT) and the Transphorm TPH320 series composite cascode GaN High Electron Mobility Transistor (HEMT) have been analysed and the experimental results illustrate typical performance characteristics of the different device technologies. Their experimental performance characteristics have been validated, explained through literature and application considerations have been stated.

Paper accepted in IOP Semiconductor Science and Technology

The following paper was accepted for publication in a special edition of IOP Semiconductor Science and Technology, special issue on Silicon Epitaxy and Silicon Heterostructures.

A. Arvanitopoulos, N. Lophitis, K. N. Gyftakis, S. Perkins, and M. Antoniou, “Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation,” Semiconductor Science and Technology, Aug. 2017. doi: 10.1088/1361-6641/aa856b

Abstract
The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, is of special interest because it has lower growth cost and can be grown heteroepitaxially in large area Silicon (Si) wafers. This in conjunction with the recently reported growth of improved quality 3C‐SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C-SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C-SiC. Considerably, it constitutes the necessary step for Finite Element Method (FEM) simulations and Technology Computer Aided Design (TCAD).