4.5kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode Neophytos Lophitis*‡, Marina Antoniou*, Florin Udrea*, Umamaheswara Vemulapati§, Martin Arnold+, Munaf Rahimo+, Jan Vobecky+ *Department of Engineering, University of Cambridge, Cambridge, UK.…