Protected: M02AEE: Machines and Drives
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4.5kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode
4.5kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode Neophytos Lophitis*‡, Marina Antoniou*, Florin Udrea*, Umamaheswara Vemulapati§, Martin Arnold+, Munaf Rahimo+, Jan Vobecky+ *Department of Engineering, University of Cambridge, Cambridge, UK.…
Power Electronics: The Rise Of The Wide Bandgap Semiconductors
Power Electronics: The Rise Of The Wide Bandgap Semiconductors. Samuel Perkins and Anastasios Arvanitopoulos Power Electronics and Trends – Power Electronics is the discipline of controlling, converting and conditioning electrical power using power solid state electronic…
MRes on high performance power electronics
MASTER OF RESEARCH ON RELIABLE AND COMPACT HIGH PERFORMANCE POWER ELECTRONICS IN ELECTRIC AND HYBRID VEHICLES THROUGH POWER SEMICONDUCTOR ENGINEERING The focus of the project will be to design devices that mitigate from issues that cause…
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