Paper accepted at the IEEE IECON 2018

The following paper has been accepted for presentation at the 44th Annual Conference of the IEEE Industrial Electronics Society (IECON) 2018, to be held in Washington, D.C., Oct. 21-23, 2018.

  • Richard Stocker, Neophytos Lophitis, Asim Mumtaz, “Development of 1d Distributed Electro-Thermal Li-Ion Cell Model” , 44th Annual Conference of the IEEE Industrial Electronics Society (IECON) 2018

12th European Conference on Silicon Carbide and Related Materials (ECSCRM)

The following paper has been accepted for presentation at the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018.

  • A. Tiwari, M. Antoniou, N. Lophitis, S. Perkins, T. Trajkovic, F. Udrea, “Performance improvement of 10kV SiC IGBTs with retrograde p-well”, The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK, Sept. 2018

The research on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme with partners from Warwick, Newcastle and Cambridge.

Papers accepted at the International Seminar on Power Semiconductors (ISPS)

The following papers have been accepted for presentation at the International Seminar on Power Semiconductors (ISPS).

  •  A. Arvanitopoulos, S. Perkins, M. Antoniou, L. Fan, M. Jennings, K. Gyftakis, N. Lophitis, “On the development of the 3C-SiC Power Law and its applicability for the Evaluation of Termination Structures”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.
  • S. Perkins, A. Arvanitopoulos, M. Antoniou, T. Trajkovic, F. Udrea, N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, International Symposium on Power Semiconductors (ISPS), Czech Republic, Prague, Aug. 2018.

The work on 4H-SiC IGBTs is funded by the EPSRC Underpinning Power Electronics Switch Optimization theme . The work on 3C-SiC is aligned with the H2020 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE) project.

EPSRC Centre for Power Electronics – 2018 Annual Conference

Coventry University featured as one of twelve member institutions of the EPSRC Centre for Power Electronics organising the 2018 Annual Conference of the Centre that took place in Loughborough on the 4th and 5th of July

 

Neo Lophitis and PhD students Anastasios Arvanitopoulos and Samuel Perkins represented Coventry University by presenting the following research:

  • Arvanitopoulos, S. Perkins, M. Jennings, M. Antoniou, F. Li, K. Gyftakis and N. Lophitis, “Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes”, EPSRC Centre for Power Electronics Loughborough, 2018.
  • S. Perkins, A. Arvanitopoulos, K. Gyftakis and N. Lophitis, “The Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures”, EPSRC Centre for Power Electronics Loughborough, 2018.
  • S. Perkins, M. Antoniou, A. Tiwari, A. Arvanitopoulos, T. Trajkovic, F. Udrea and N. Lophitis, “>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments”, EPSRC Centre for Power Electronics Loughborough, 2018.

MSc in Electrical Automotive Engineering

We are launching our new course, MSc in Electrical Engineering for which a launch event is organised on Wednesday 13th June 9.45am-1pm at Coventry University (Engineering and Computing Building, CV12JH). Come and ask questions to an expert panel made up of relevant experts from both industry and academia.

To register, click here: https://goo.gl/ojjRRW or visit the course website which can be found here: https://www.coventry.ac.uk/course-structure/PG/2018-19/eec/electrical-automotive-engineering-msc/

The course structure is as below:

Semester 1:

  • Electrical Machines
  • Power semiconductors and converters
  • Sensor and Measurement Technology
  • Automotive electronics and embedded systems

Semester 2

  • Automotive cybersecurity
  • Automotive Networking and Signal Processing
  • Energy Storage and High Voltage Systems
  • Global Professional Development – Entrepreneurship

Semester 3

  • Individual Project

 

 

New Power Electronics and Electrical Machines Teaching Lab

We have recently commissioned a new Power Electronics and Electrical Machines teaching laboratory, within the School of Computing Electronics and Mathematics, Faculty of Engineering, Environment and Computing of Coventry University.

The new facility is going to enhance the existing Power Teaching lab with new, state-of-the-art test benches. It will indeed strengthen our ability to equip our students with the necessary skills, scientific and practical in the exciting area of Electrical and Electromechanical Power Conversion.

MRes on high performance power electronics

MASTER OF RESEARCH ON RELIABLE AND COMPACT HIGH PERFORMANCE POWER ELECTRONICS IN ELECTRIC AND HYBRID VEHICLES THROUGH POWER SEMICONDUCTOR ENGINEERING

The focus of the project will be to design devices that mitigate from issues that cause reliability problems and fully exploit the advanced characteristics of wide band gap semiconductors.

Systems and applications that incorporate power electronics and therefore power semiconductor devices have high efficiency and advanced functionality. Wide bandgap semiconductor materials such as the Silicon Carbide (SiC) and the Gallium Nitride (GaN) have superior electrical characteristics compared to silicon. As a result, high voltage power devices can get a real step-improvement in performance, efficiency and the ability to operate at elevated temperatures.

In hybrid and electric vehicles, the electric powertrain requires less cooling and it becomes more efficient if wide band gap semiconductor devices are used in the power electronics system. Further, the fuel economy of the vehicle increases and more cabin area becomes available.

Similar benefits arise when wide bandgap power devices are used in other applications, for example in power transmission systems, in conditioning power from wind and solar farms, consumer electronics and so on.

This project aims to provide with the development of a wide band gap high voltage device that fully exploits the material characteristics of wide band gap semiconductors such as the SiC through power semiconductor engineering.

Depending on the student’s academic background, we foresee a suite of studies that may include:

  • Technology Computer Aided Design (TCAD) modelling of semiconductor materials and devices. This includes modelling material parameters such as the bang gap, effective mass. density of states, activation energy for implants, electron mobility.
  • Physical modelling of traps due to defects including the development of traps model.
  • Process simulations.
  • Layout design.
  • Circuit design, experimentation, measurements and characterisation to demonstrate of the overall performance of the proposed solution.

 

More details here